SanDisk makes 128-gigabit flash chip, crams three bits per cell, takes afternoon off

| March 12, 2012

SanDisk has developed a small piece that earns it membership in the fastidious 128-gigabit club. Not content through simply matching the Micron / Intel struggle, SanDisk and its partner Toshiba claim their reinvigorated memory uses 19- rather than 20-nanometer cells in the prolongation process. Shrinking the size is some thing, but SanDisk’s new chips besides use its X3 / three-bit technology. Most celebrity stores just two bits per solitary abode; squalid; cramming in another means fewer cells, not so much silicon, more savings, cheaper memory, happier geeks. Analyst Jim Handy estimates that the value per gigabyte for the tri-scintilla breed of flash could be being of the kind which low as 28 cents, compared to 35 conducive to the Micron / Intel equivalent. Full distinct parts in the not-so-compact smooth release after the break.

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Highest-extent of room single die NAND flash memory fragment extends leadership in three-bit by means of cell technology
Paper outlining achievement to subsist delivered at technical conference

MILPITAS, Calif, Feb. 22, 2012 – SanDisk Corporation (NASDAQ: SNDK), a global conductor in flash memory storage solutions, today announced it has developed the creation’s smallest 128 gigabit (Gb)* NAND twinkling of an eye memory chip currently in production. The semiconductor device can store 128 billion individual bits of knowledge of facts on a single silicon die 170mm2 in bulk – a little more than a specific place of an inch squared, or smaller than the territory covered by a U.S. penny.

The practice of NAND flash memory in obscure tech equipment like smartphones, tablets and cubic state drives (SSDs) allows advances in the replete function, small form factor devices that are extremely valued by consumers. Shrinking the bigness of NAND flash memory allows smaller, added powerful computing, communications and consumer electronics devices to be built while keeping costs low.

SanDisk built the 128Gb NAND glare memory chip on the company’s labor-leading 19 nanometer (nm) process technology. A nanometer measures common-billionth of a meter, meaning that 19nm district lines are so small that around 3,000 of them could fit across the width of a human hair. The chip also employs SanDisk’s three-bit per cell (X3) technology that allows the congregation to build NAND flash memory products by the ability to read and frame three bits of information in harvested land memory cell.

At 19nm, SanDisk is deploying its ninth collection of those of nearly the same age of multi-level cell (MLC) NAND products and fifth race of X3 technology. This combination of manufacturing and technical expertise helps SanDisk burden more information into each memory enclosed space making it possible to create a smaller, denser NAND glare memory chip.

“Building a 128Gb NAND sudden burst of light memory chip with this level of intricacy is an incredible achievement,” said Mehrdad Mofidi, in place of president, Memory Design. “This innovation allows SanDisk to tarry to be a leader in helping our customers set at liberty smaller, more powerful products capable of doing greater quantity at lower cost.”

In addition to reduced greatness, the 128Gb semiconductor device has an industry-leading X3 write performance of 18 megabytes (MB)** for second. This level of performance is achieved using SanDisk’s patented advanced everything bit line (ABL) architecture and appliance that X3 technology could be extended to known but unnamed product categories that use MLC NAND moment memory. A technical paper outlining the breakthrough direction be presented at the International Solid-State Circuits Conference (ISSCC) in San Francisco today.

The 128Gb NAND gleam memory chip was developed jointly by teams from SanDisk and Toshiba at SanDisk’s Milpitas campus. The stretch was led by Yan Li, instructor of Memory Design at SanDisk. Products based forward the 128Gb three-bit per confined apartment technology began shipping late last year and bring forth already started to ramp into lordly volume production. SanDisk has also developed a derived product based on the success of the 128Gb hew – a 64Gb, X3 NAND flash remembrance chip that is compatible with the effort; labors-standard microSD™ format. The assembly has also started to ramp product of this additional chip technology.

NAND cant language memory is the technology behind the proud reliability, small form factor storage solutions that SanDisk sells to OEM customers despite use in a wide variety of products like as smartphones, tablets and Ultrabooks. It is in addition the technology used in products SanDisk sells from one side its retail channel in the configurationation of imaging and mobile cards, USB drives and mp3 players.


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